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  d a t a sh eet product speci?cation file under integrated circuits, ic01 may 1992 integrated circuits TDA1572T am receiver
may 1992 2 philips semiconductors product speci?cation am receiver TDA1572T general description the TDA1572T integrated am receiver circuit performs all the active functions and part of the filtering required of an am radio receiver. it is intended for use in mains-fed home receivers and car radios. the circuit can be used for oscillator frequencies up to 50 mhz and can handle rf signals up to 500 mv. rf radiation and sensitivity to interference are minimized by an almost symmetrical design. the controlled-voltage oscillator provides signals with extremely low distortion and high spectral purity over the whole frequency range, even when tuning with variable capacitance diodes. if required, band switching diodes can easily be applied. selectivity is obtained using a block filter before the if amplifier. features inputs protected against damage by static discharge gain-controlled rf stage double balanced mixer separately buffered, voltage-controlled and temperature-compensated oscillator, designed for simple coils gain-controlled if stage with wide agc range full-wave, balanced envelope detector internal generation of agc voltage with possibility of second-order filtering buffered field strength indicator driver with short-circuit protection af preamplifier with possibilities for simple af filtering electronic standby switch if output for stereo demodulator and search tuning. quick reference data package outline 20-lead mini-pack; plastic (so20; sot163a); sot163-1; 1996 august 13. symbol parameter conditions min. typ. max. unit v p supply voltage range 7.5 8.5 14.0 v i p supply current range v p = 8.5 v 15 25 28 ma rf input voltage (rms value) v ifr(rms) for (s + n)/n = 6 db m = 30% - 1.5 -m v v irf(rms) for thd = 3% m = 80% - 500 - mv v oif(rms) if output voltage (rms value) v i = 2 mv(rms) 180 230 290 mv af output voltage (rms value) v i = 2 mv(rms); f i = 1 mhz; m = 30%; v oaf(rms) f m = 400 hz 240 310 390 mv agc range change of v i for 1 db d v i change of v oaf - 86 - db indicator driver (pin 13) output voltage v i = 500 mv(rms); v o r l = 2.7 k w 2.5 2.8 3.1 v
may 1992 3 philips semiconductors product speci?cation am receiver TDA1572T fig.1 block diagram and test circuits (connections shown in broken lines are not part of the test circuits). (1) coil data: toko sample no. 7xns-a7523dy; l1 : n1/n2 = 12/32; q o = 65; q b = 57. filter data: z f = 700 w at r 3-4 = 3 k w ; z i = 4.8 k w .
may 1992 4 philips semiconductors product speci?cation am receiver TDA1572T pinning 1 mxo mixer output 2 stb standby switch 3 ifi1 if input 1 4 ifi2 if input 2 5 det detector 6 afo1 af output 1 7 agc1 agc stage 1 8 acg2 agc stage 2 9 afo2 af output 2 10 n.c. not connected 11 n.c. not connected 12 ifo if output 13 ind indicator output 14 oso buffered oscillator output 15 osc1 oscillator 1 16 osc2 oscillator 2 17 v p supply voltage 18 rfi1 rf input 1 19 rfi2 rf input 2 20 gnd ground fig.2 pinning diagram.
may 1992 5 philips semiconductors product speci?cation am receiver TDA1572T functional description gain-controlled rf stage and mixer the differential amplifier in the rf stage employs an agc negative feedback network to provide a wide dynamic range. very good cross-modulation behaviour is achieved by agc delays at the various signal stages. large signals are handled with low distortion and the (s + n)/n ratio of small signals is improved. low noise working is achieved in the differential amplifier by using transistors with low base resistance. a double balanced mixer provides the if output signal to pin 1. oscillator the differential amplifier oscillator is temperature compensated and is suitable for simple coil connection. the oscillator is voltage-controlled and has little distortion or spurious radiation. it is specially suitable for electronic tuning using variable capacitance diodes. band switching diodes can easily be applied using the stabilized voltage v 15-20 . an extra buffered oscillator output (pin 14) is available for driving a synthesizer. if this is not needed, resistor r l(14) can be omitted. gain-controlled if ampli?er this amplifier comprises two cascaded, variable-gain differential amplifier stages coupled by a band-pass filter. both stages are gain-controlled by the agc negative feedback network. the if output is available at pin 12. detector the full-wave, balanced envelope detector has very low distortion over a wide dynamic range. residual if carrier is blocked from the signal path by an internal low-pass filter. af preampli?er this stage preamplifies the audio frequency output signal. the amplifier output has an emitter follower with a series resistor which, together with an external capacitor, yields the required low-pass for af filtering. agc ampli?er the agc amplifier provides a control voltage which is proportional to the carrier amplitude. second-order filtering of the agc voltage achieves signals with very little distortion, even at low audio frequencies. this method of filtering also gives fast agc settling time which is advantageous for electronic search tuning. the agc settling time can be further reduced by using capacitors of smaller value in the external filter (c16 and c17). the agc voltage is fed to the rf and if stages via suitable agc delays. the capacitor at pin 7 can be omitted for low-cost applications. field strength indicator output a buffered voltage source provides a high-level field strength output signal which has good linearity for logarithmic input signals over the whole dynamic range. if the field strength information is not needed, r l(13) can be omitted. standby switch this switch is primarily intended for am/fm band switching. during standby mode the oscillator, mixer and af preamplifier are switched off. short-circuit protection all pins have short-circuit protection to ground.
may 1992 6 philips semiconductors product speci?cation am receiver TDA1572T ratings limiting values in accordance with the absolute maximum system (iec 134) note 1. equivalent to discharging a 100 pf capacitor through a 1.5 k w series resistor; (5 pulses, both polarities). thermal resistance symbol parameter min. max. unit v p = v 17-20 supply voltage (pin 17) - 16 v |v 18-19 | input voltage - 12 v - v 18-19 ; - v 19-20 - 0.6 v v 18-19 ; v 19-20 - v p v ? i 18 ? ; ? i 20 ? input current (pins 18 and 20) - 200 ma p tot total power dissipation - 500 mw t stg storage temperature range - 55 +150 c t amb operating ambient temperature range - 40 +85 c t j junction temperature - +125 c electrostatic handling (1) v es all pins except pins 3, 6, 9, 14 - 2000 +2000 v v es pins 3, 6, 14 - 1500 +2000 v v es pin 9 - 1000 +2000 v from junction to ambient (in free air) r th j-a (max.) = 95 k/w
may 1992 7 philips semiconductors product speci?cation am receiver TDA1572T characteristics v p = v 17-20 = 8.5 v; t amb = 25 c; f i = 1 mhz; f m = 400 hz; m = 30%; f if = 460 khz; measured in test circuit of fig.1; all voltages referenced to ground; unless otherwise speci?ed. symbol parameter min. typ. max. unit supply v p supply voltage (pin 17) 7.5 8.5 14.0 v i p supply current (pin 17) 15 25 28 ma rf stage and mixer (pins 18 and 19) v i dc input voltage - v p /2 - v z i rf input impedance at v i < 300 m v (rms) - 5.5 - k w c i rf input capacitance - 25 - pf z i rf input impedance at v i > 10 mv (rms) - 8 - k w c i rf input capacitance - 22 - pf z o if output impedance (pin 1) 200 -- k w c o if output capacitance - 6 - pf conversion transconductance i 1 /v i before start of agc - 6.5 - ma/v maximum if output voltage, inductive v 1-17(p-p) coupling to pin 1 (peak-to-peak value) - 5 - v dc value of output current; i o at v i = 0 v (pin 1) - 1.2 - ma agc range of input stage - 30 - db rf signal handling capability input voltage (rms value) v i(rms) for thd = 3% at m = 80% - 500 - mv
may 1992 8 philips semiconductors product speci?cation am receiver TDA1572T oscillator f osc frequency range 0.1 - 60 mhz voltage amplitude (pins 15 to 16) v (rms) (rms value) 80 130 150 mv r (ext) external load impedance (pins 16 to 15) 0.5 - 200 k w external load impedance for no r (ext) oscillation (pins 16 to 15) -- 60 w supply voltage ripple rejection at v p = 100 mv(rms); f p = 100 hz svrr (svrr = 20 log [v 17 /v 15 ]) - 55 - db source voltage for switching diodes v 15-20 (6 x v be ) (pin 15) - 4.2 - v dc output current (for switching - i o diodes) (pin 15) 0 - 20 ma change of output voltage at d i 15 = 20 ma (switch to maximum load) d v i (pin 15) - 0.3 - v buffered oscillator output (pin 14) v o dc output voltage - 0.8 - v output signal amplitude v o(p-p) (peak-to-peak value) - 320 - mv z o output impedance - 170 -w - i o(peak) output current (peak value) -- 3ma if, agc and af stages v i dc input voltage (pins 3 and 4) - 2.0 - v z i if input impedance (pins 3 to 4) 2.4 3.0 3.9 k w c i if input capacitance - 7 - pf if input voltage for thd = 3% at m = 80% (pins 3 and 4) v iif(rms) (rms value) - 90 - mv z o if output impedance (pin 12) - 50 -w unloaded if output voltage at v i = 10 mv (pin 12) v oif(rms) (rms value) 180 230 290 mv voltage gain before start of agc g v (pins 3 to 4; 6 to 20) - 68 - db agc range of if stages: change of v 3-4 for 1 db change of v o(af); d v v v 3-4(ref) = 75 mv(rms) - 55 - db symbol parameter min. typ. max. unit
may 1992 9 philips semiconductors product speci?cation am receiver TDA1572T af output voltage (rms value) v oaf(rms) at v 3-4(if) = 50 m v(rms) - 130 - mv v oaf(rms) at v 3-4(if) = 1 mv(rms) - 310 - mv ? z o ? af output impedance (pin 6) 2.8 3.5 4.2 k w ? z o ? af output impedance (pin 9) 12.4 15.5 18.6 k w indicator driver (pin 13) output voltage at v i = 0 mv(rms); v o r l = 2.7 k w-- 140 mv output voltage at v i = 500 mv(rms); v o r l = 2.7 k w 2.5 2.8 3.1 v r l load resistance 1.5 -- k w - i o output current at v i = 500 mv(rms) -- 2.0 ma z o output impedance at - i o = 0.5 ma - 220 -w v o reverse output voltage at am off - 6 - v standby switch switching threshold at; v p = 7.5 to 14 v t amb = - 40 to + 80 c v 2-20 on-voltage 0 - 2.0 v v 2-20 off-voltage 3.5 - 20.0 v - i 2 on-current at v 2-20 = 0 v - 100 200 m a ? i 2 ? off-current at v 2-20 = 14 v -- 10 m a symbol parameter min. typ. max. unit
may 1992 10 philips semiconductors product speci?cation am receiver TDA1572T operating characteristics v p = 8.5 v; f i = 1 mhz; m = 30%; f m = 400 hz; t amb = 25 c; measured in fig.1; unless otherwise speci?ed symbol parameter min. typ. max. unit rf sensitivity rf input voltage (rms value) v irf(rms) for (s + n)/n = 6 db - 1.5 -m v v irf(rms) for (s + n)/n = 26 db - 15 -m v v irf(rms) for (s + n)/n = 46 db - 150 -m v v irf(rms) at start of agc - 30 -m v rf large signal handling rf input voltage (rms value) v irf(rms) at thd = 3%; m = 80% - 500 - mv v irf(rms) at thd = 3%; m = 30% - 700 - mv v irf(rms) at thd = 10%; m = 30% - 900 - mv agc range change of v i for 1 db change d v i of v oaf ; v i(ref) = 500 mv(rms) - 86 - db change of v i for 6 db change d v i of v oaf ; v i(ref) = 500 mv(rms) - 91 - db output signal (rms value) v oif(rms) if output voltage at v i = 2 mv(rms) 180 230 290 mv af output voltage v oaf(rms) at v i = 4 m v(rms); m = 80% - 130 - mv v oaf(rms) at v i = 2 mv(rms) 240 310 390 mv total harmonic distortion thd at v i = 2 mv(rms); m = 30% - 0.5 - % thd at v i = 2 mv(rms); m = 80% - 1.0 - % thd at v i = 500 mv(rms); m = 30% - 1.0 - % (s + n)/n signal-to-noise ratio at v i = 100 mv(rms) - 58 - db supply voltage ripple rejection at v i = 2 mv(rms) v p = 100 mv(rms); f p = 100 hz svrr (svrr = 20 log [v p /v oaf ]) - 38 - db svrr (a) additional af signal at if output - 0 (1) - db svrr (b) add modulation at if output (m ref = 30%) - 40 - db
may 1992 11 philips semiconductors product speci?cation am receiver TDA1572T note 1. af signals at the if output will be suppressed by a coupling capacitor to the demodulator and by full wave-detection in the demodulator. unwanted signals suppression of if whistles at v i = 15 m v; m = 0% related to af signal of m = 30% a 2if at f i ? 2 f if - 37 - db a 3if at f i ? 3 f if - 44 - db if suppression at rf input; a if for symmetrical input - 40 - db a if for asymmetrical input - 40 - db residual oscillator signal at mixer output; i 1(osc) at f osc - 1 -m a i 1(2osc) at 2 f osc - 1.1 -m a symbol parameter min. typ. max. unit fig.3 af output as a function of rf input in the circuit of fig.1; f i = 1 mhz; f m = 400 hz; m = 30%. fig.4 total harmonic distortion and (s + n)/n as functions of rf input in the circuit of fig.1; m = 30% for (s + n)/n curve and m = 80% for thd curve.
may 1992 12 philips semiconductors product speci?cation am receiver TDA1572T fig.5 total harmonic distortion as a function of modulation frequency at v i = 5 mv; m = 80%; measured in the circuit of fig.1 with c 7-20(ext) = 0 m f and 2.2 m f. fig.6 indicator driver voltage as a function of rf input in the circuit of fig.1. fig.7 typical frequency response curves from fig.1 showing the effect of filtering. ___________ with if filter; ? - ? - ? with af filter; - - - - - - with if and af filters.
may 1992 13 philips semiconductors product speci?cation am receiver TDA1572T fig.8 if output voltage as a function of rf input in the circuit of fig.1; f i = 1 mhz. fig.9 forward transfer impedance as a function of intermediate frequency for filters 1 to 4 shown in fig.10; centre frequency = 455 khz.
may 1992 14 philips semiconductors product speci?cation am receiver TDA1572T application information fig.10 if filter variants applied to the circuit of fig.1. for filter data, refer to table 1.
may 1992 15 philips semiconductors product speci?cation am receiver TDA1572T fig.11 application diagram.
may 1992 16 philips semiconductors product speci?cation am receiver TDA1572T fig.12 (s + n)/n as a function of input voltage; measured in the circuit of fig.11 for am stereo. fig.13 total harmonic distortion (thd) as a function of input voltage; measured in the circuit of fig.11 for am stereo.
may 1992 17 philips semiconductors product speci?cation am receiver TDA1572T table 1 data for if ?lters shown in fig.10 (filter 1 to 4) and fig.11 (filter 5). criteria for adjustment is if = maximum (optimum selectivity curve at centre frequency f 0 = 455 khz). filter 5 is used for am stereo application with centre frequency f 0 = 450 khz. * the beginning of an arrow indicates the beginning of a winding; n1 is always the inner winding, n2 the outer winding. filter no. 1 2 3 4 5 unit coil data l1 l1 l1 l2 l1 l1 value of c 3900 430 3900 4700 3900 4700 pf n1 : n2 12 : 32 13 : (33 + 66) 15 : 31 29 : 29 13 : 31 26 : 32 diameter of cu laminated wire 0.09 0.08 0.09 0.08 0.09 0.07 mm q o 65 (typ.) 50 75 60 75 50 schematic* of windings (n1) (n2) toko order no. 7xns-a7523dy l7pes-a0060btg 7xns-a7518dy 7xns-a7521aih 7xns-a7519dy resonators murata type sfz455a sfz455a sfz455a sft455b sfh450f d (typical value) 4 4 4 6 6 db r g , r l 33 3 32 k w bandwidth ( - 3 db) 4.2 4.2 4.2 4.5 10 khz s 9khz 24 24 24 38 db filter data z i 4.8 3.8 4.2 4.8 1.8 k w q b 57 40 52 (l1) 18 (l2) 55 20 z f 0.70 0.67 0.68 0.68 0.70 k w bandwidth ( - 3 db) 3.6 3.8 3.6 4.0 10 khz s 9khz 35 31 36 42 db s 18khz 52 49 54 64 db s 27khz 63 58 66 74 db
may 1992 18 philips semiconductors product speci?cation am receiver TDA1572T package outline unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p q z y w v q references outline version european projection issue date iec jedec eiaj mm inches 2.65 0.30 0.10 2.45 2.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.1 1.0 0.9 0.4 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.1 0.4 sot163-1 92-11-17 95-01-24 10 20 w m b p detail x z e 11 1 d y 0.25 075e04 ms-013ac pin 1 index 0.10 0.012 0.004 0.096 0.089 0.019 0.014 0.013 0.009 0.51 0.49 0.30 0.29 0.050 1.4 0.055 0.42 0.39 0.043 0.039 0.035 0.016 0.01 0.25 0.01 0.004 0.043 0.016 0.01 0 5 10 mm scale x q a a 1 a 2 h e l p q e c l v m a (a ) 3 a so20: plastic small outline package; 20 leads; body width 7.5 mm sot163-1
may 1992 19 philips semiconductors product speci?cation am receiver TDA1572T soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). re?ow soldering reflow soldering techniques are suitable for all so packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. wave soldering wave soldering techniques can be used for all so packages if the following conditions are observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow. the package footprint must incorporate solder thieves at the downstream end. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. repairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
may 1992 20 philips semiconductors product speci?cation am receiver TDA1572T definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.


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